• DocumentCode
    1474446
  • Title

    60-110 GHz low loss HDI transitions for LCP-packaged silicon substrate

  • Author

    Chung, D.J. ; Papapolymerou, John

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    46
  • Issue
    8
  • fYear
    2010
  • Firstpage
    577
  • Lastpage
    578
  • Abstract
    Wideband 3D transitions from 60 to 110 GHz using 50 m via technology on liquid crystal polymer (LCP) are presented. A conductor backed coplanar waveguide (CBCPW) transition on a homogeneous LCP sample shows less than 0.8 dB loss from 60 to 110 GHz. In addition, a CBCPW-to-CBCPW and a CBCPW-to-CPW transition on LCP bonded to silicon substrate are presented also in the range 60-110 GHz. The CBCPW-to-CBCPW transition shows less than 0.5 dB loss up to 100 GHz. The CBCPW-to-CPW transition yields less than 1 dB loss up to 110 GHz. These transitions are the first characterisation of vias in organic substrate packaged silicon in the 60-110 GHz frequency range.
  • Keywords
    coplanar waveguides; elemental semiconductors; integrated circuit interconnections; liquid crystal polymers; silicon; waveguide transitions; CBCPW transition; HDI transitions; LCP-packaged silicon substrate; conductor backed coplanar waveguide transition; frequency 60 GHz to 110 GHz; liquid crystal polymer; organic substrate packaged silicon; size 50 μm; wideband 3D transitions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.0241
  • Filename
    5451016