Broadband Quantum-Dot Infrared Photodetector

Author

Lin, Wei-Hsun ; Tseng, Chi-Che ; Chao, Kuang-Ping ; Kung, Shu-Yen ; Lin, Shih-Yen ; Wu, Meng-Chyi

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

22

Issue

13

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

963

Lastpage

965

Abstract

In this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 μm with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 μm with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InGaAs-InAs; LWIR; MWIR; QDIP; bistacked QD structure; flat detection response; long-wavelength infrared range; midwavelength infrared range; quantum-dot infrared photodetector; Quantum-dot infrared photodetectors (QDIPs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2048425

Filename

5451060