DocumentCode
1476015
Title
Record High-Temperature Long-Pulse Operation of 8xx-nm Diode Laser Bar with Aluminum-Free Active Region
Author
Fan, Li ; Cao, Chuanshun ; Thaler, Gerald ; Caliva, Brian ; Ai, Irene ; Das, Suhit ; Walker, Robert ; Zeng, Linfei ; McElhinney, Mark ; Thiagarajan, Prabhu
Author_Institution
Lasertel, Inc., Tucson, AZ, USA
Volume
17
Issue
6
fYear
2011
Firstpage
1727
Lastpage
1734
Abstract
We report on the first demonstration of long-pulse (milliseconds) operation of aluminum-free active-region 8xx-nm diode laser bar at heat-sink temperature of 180 °C. This is, to the best of our knowledge, the highest published operating temperature for a long-pulse 8xx-nm laser bar with Al-free active region. The laser bars have very robust performance at 130 °C without any active cooling. At this high temperature, the laser bars provide both high peak power (60 W at 100 A) and good pulse shape for tens of milliseconds pulse width, maintaining high energy per pulse. The dependence of laser output pulse shape on the pulse width and pump current is experimentally investigated at 130 °C. We find that the transient output power of the laser bar follows P(t) = A exp(-t /t0) + Bt + C, where A, B, C, and t 0 are fitting parameters that are pulse width and current dependent. We have also investigated the transient thermal behavior of the laser bar at high temperature and high pump current.
Keywords
heat sinks; high-temperature effects; optical pulse shaping; optical pumping; quantum well lasers; aluminum-free active region; current 100 A; diode laser; heat-sink temperature; high-temperature long-pulse operation; laser output pulse shape; millisecond pulse width; power 60 W; pump current; temperature 130 degC; temperature 180 degC; transient output power; transient thermal properties; Diode lasers; Pump lasers; Semiconductor lasers; Thermal factors; Aluminum-free active region; high-power laser bar; high-temperature operation; long-pulse operation; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2011.2115234
Filename
5735159
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