• DocumentCode
    1476015
  • Title

    Record High-Temperature Long-Pulse Operation of 8xx-nm Diode Laser Bar with Aluminum-Free Active Region

  • Author

    Fan, Li ; Cao, Chuanshun ; Thaler, Gerald ; Caliva, Brian ; Ai, Irene ; Das, Suhit ; Walker, Robert ; Zeng, Linfei ; McElhinney, Mark ; Thiagarajan, Prabhu

  • Author_Institution
    Lasertel, Inc., Tucson, AZ, USA
  • Volume
    17
  • Issue
    6
  • fYear
    2011
  • Firstpage
    1727
  • Lastpage
    1734
  • Abstract
    We report on the first demonstration of long-pulse (milliseconds) operation of aluminum-free active-region 8xx-nm diode laser bar at heat-sink temperature of 180 °C. This is, to the best of our knowledge, the highest published operating temperature for a long-pulse 8xx-nm laser bar with Al-free active region. The laser bars have very robust performance at 130 °C without any active cooling. At this high temperature, the laser bars provide both high peak power (60 W at 100 A) and good pulse shape for tens of milliseconds pulse width, maintaining high energy per pulse. The dependence of laser output pulse shape on the pulse width and pump current is experimentally investigated at 130 °C. We find that the transient output power of the laser bar follows P(t) = A exp(-t /t0) + Bt + C, where A, B, C, and t 0 are fitting parameters that are pulse width and current dependent. We have also investigated the transient thermal behavior of the laser bar at high temperature and high pump current.
  • Keywords
    heat sinks; high-temperature effects; optical pulse shaping; optical pumping; quantum well lasers; aluminum-free active region; current 100 A; diode laser; heat-sink temperature; high-temperature long-pulse operation; laser output pulse shape; millisecond pulse width; power 60 W; pump current; temperature 130 degC; temperature 180 degC; transient output power; transient thermal properties; Diode lasers; Pump lasers; Semiconductor lasers; Thermal factors; Aluminum-free active region; high-power laser bar; high-temperature operation; long-pulse operation; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2011.2115234
  • Filename
    5735159