DocumentCode
1476253
Title
Foreword Special Section on Through Silicon Vias
Author
Kam, Dong Gun ; Kim, Jung-Ho
Volume
1
Issue
2
fYear
2011
Firstpage
152
Lastpage
153
Abstract
The 11 papers in this special section present a snapshot of recent progress in electrical modeling and design of through silicon vias (TSVs) by researchers from both academia and industry. The section is organized into three main areas. The first group of papers deals with the electromagnetic modeling of TSVs. The second group of papers is on the signal integrity and power integrity analysis of TSV interconnections. The third group of papers explores the system architectures and applications that might benefit from the TSV technology.
Keywords
Special issues and sections; Through-silicon vias;
fLanguage
English
Journal_Title
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-3950
Type
jour
DOI
10.1109/TCPMT.2011.2116970
Filename
5735195
Link To Document