• DocumentCode
    1476253
  • Title

    Foreword Special Section on Through Silicon Vias

  • Author

    Kam, Dong Gun ; Kim, Jung-Ho

  • Volume
    1
  • Issue
    2
  • fYear
    2011
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    The 11 papers in this special section present a snapshot of recent progress in electrical modeling and design of through silicon vias (TSVs) by researchers from both academia and industry. The section is organized into three main areas. The first group of papers deals with the electromagnetic modeling of TSVs. The second group of papers is on the signal integrity and power integrity analysis of TSV interconnections. The third group of papers explores the system architectures and applications that might benefit from the TSV technology.
  • Keywords
    Special issues and sections; Through-silicon vias;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2011.2116970
  • Filename
    5735195