Abstract :
Researchers at Massachusetts Institute of Technology (MIT) in the US demonstrates a new approach to improve the high-frequency characteristics of InAlAs high electron mobility transistors (HEMTs). In their Letter in this issue Taewo Kim, Dae-hyun Kim (now at Teledyne Scientific Company) and Jesus del Alamo report on how their optimised heterostructure design with an InAs-rich spacer in the InAlAs barrier increased in the current gain cut-off frequency fT to 530 GHz from 390 GHz for a device with a gate length Lg of 40 nm.
