DocumentCode
1476733
Title
Atomic-layer engineering of superconducting oxides: yesterday, today, tomorrow
Author
Bozovic, Ivan
Author_Institution
OXXEL GmbH, Bremen, Germany
Volume
11
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
2686
Lastpage
2695
Abstract
In the last decade, great progress has been made in atomic-layer synthesis of high-temperature superconductors (HTS) and related oxides. Achievements include growth of single-crystal films of various HTS phases, precise multilayers and superlattices, the first artificial HTS compounds, and superconductor-normal metal-superconductor (SNS) trilayer Josephson junctions with good characteristics and uniformity. Today, we are trying to integrate atomic-layer engineering, combinatorial molecular beam epitaxy (MBE) synthesis, and state-of-the-art analytical tools for surface science. In future. I expect the technique to be improved further and scaled up to manufacturing. This will trigger progress in basic physics, materials science, and electronics. A variety of novel devices, combining different oxide functionality, will be built. Large-scale integration will be achieved. Eventually, one can envision multi-functional all-oxide electronics-sensors, processing, and memory devices, all monolithically integrated within a single chip
Keywords
Josephson effect; atomic layer epitaxial growth; high-temperature superconductors; molecular beam epitaxial growth; superconducting epitaxial layers; superconducting superlattices; atomic-layer engineering; high-temperature superconductors; molecular beam epitaxy; precise multilayers; superconducting oxides; superconductor-normal metal-superconductor; superlattices; trilayer Josephson junctions; Atomic beams; High temperature superconductors; Josephson junctions; Metallic superlattices; Molecular beam epitaxial growth; Nonhomogeneous media; Superconducting devices; Superconducting epitaxial layers; Superconducting films; Superconducting materials;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.919617
Filename
919617
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