CMOS technology characterization for analog and RF design

Author

Razavi, Behzad

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

34

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

268

Lastpage

276

Abstract

The design of analog and radio-frequency (RF) circuits in CMOS technology becomes increasingly more difficult as device modeling faces new challenges in deep submicrometer processes and emerging circuit applications. The sophisticated set of characteristics used to represent today´s “digital” technologies often proves inadequate for analog and RF design, mandating many additional measurements and iterations to arrive at an acceptable solution. This paper describes a set of characterization vehicles that can be employed to quantify the analog behaviour of active and passive devices in CMOS processes, in particular, properties that are not modeled accurately by SPICE parameters. Test structures and circuits are introduced for measuring speed, noise, linearity, loss, matching, and dc characteristics

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; VLSI; field effect MMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; CMOS technology characterization; RF design; active devices; analog design; characterization vehicles; dc characteristics; deep submicrometer processes; device modeling; linearity; matching; passive devices; CMOS analog integrated circuits; CMOS process; CMOS technology; Circuit testing; Loss measurement; Radio frequency; SPICE; Semiconductor device modeling; Vehicles; Velocity measurement;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.748177

Filename

748177