GSM transceiver front-end circuits in 0.25-μm CMOS

Author

Huang, Qiuting ; Orsatti, Paolo ; Piazza, Francesco

Author_Institution

Integrated Syst. Lab., Fed. Inst. of Technol., Zurich, Switzerland

Volume

34

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

292

Lastpage

303

Abstract

So far, CMOS has been shown to be capable of operating at radio-frequency (RF) frequencies, although the inadequacies of the device-level performance often have to be circumvented by innovations at the architectural level that tend to shift the burden to the circuit building blocks at lower frequencies, The RF front-end circuits presented in this paper show that excellent RF performance is feasible with 0.25-μm CMOS, even in terms of the requirements of the tried-and-true superheterodyne architecture. Design for low-noise and low-current consumption targeted for GSM handsets has been given particular attention in this paper. Low-noise amplifiers with sub-2-dB noise figures (NFs) and a double balanced mixer with 12.6 dB single-sideband NF, as well as sub-25-mA current consumption for the RF front end (complete receiver), are among the main achievements

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; integrated circuit noise; preamplifiers; superheterodyne receivers; telephone sets; transceivers; 0.25 micron; 12.6 dB; 2 dB; 25 mA; CMOS implementation; GSM handsets; GSM transceiver front-end circuits; LNA; RF front-end circuits; cellular telephone handsets; double balanced mixer; low-current consumption; low-noise amplifiers; low-noise operation; radiofrequency operation; superheterodyne architecture; Baseband; CMOS technology; GSM; Low-noise amplifiers; Radio frequency; Radiofrequency integrated circuits; Telephone sets; Telephony; Transceivers; Transmitters;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.748180

Filename

748180