DocumentCode
1478022
Title
Conduction type control of Si-doped GaAs on
Author
Takamori, Toshi ; Watanabe, K. ; Fukunaga, T.
Author_Institution
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
27
Issue
9
fYear
1991
fDate
4/25/1991 12:00:00 AM
Firstpage
729
Lastpage
730
Abstract
It is shown that the conduction type of MBE grown Si-doped GaAs on
Keywords
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 600 C; GaAs:Si; MBE; V/III flux ratio; carrier compensation; conduction type control; electron concentration; growth temperature; p to n-type conversion; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910453
Filename
74886
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