Title :
SiC-based phototransistor with a tunnel MOS emitter
Author :
Grekhov, Igor V. ; Ivanov, Pavel A. ; Samsonova, Tatyana P. ; Shulekin, Alexander F. ; Vexler, Mikhail I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
3/1/1999 12:00:00 AM
Abstract :
Au/tunnel-thin SiO2/n-6H-SiC structures have first been fabricated and shown to operate as tunnel MOS emitter phototransistors under reverse bias and UV-irradiation conditions (current gain reached 3-7). This paper contains details of sample preparation, measured device characteristics, and their interpretation
Keywords :
MIS devices; gold; inversion layers; phototransistors; semiconductor materials; silicon compounds; tunnel transistors; ultraviolet radiation effects; Au-SiO2-SiC; UV-irradiation conditions; current gain; device characteristics; phototransistor; reverse bias; sample preparation; tunnel MOS emitter; Charge carrier processes; Current measurement; Gold; MOSFETs; Photoconductivity; Photonic band gap; Phototransistors; Silicon carbide; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
