Title :
Optimization of advanced MOS technologies for narrow distribution of circuit performance
Author :
Hoenigschmid, Heinz ; Miura-Manausch, M. ; Prigge, Odin ; Rahm, Alexander ; Savignac, Dominique
Author_Institution :
IBM/Siemens, East Fishkill, NY, USA
fDate :
2/1/1997 12:00:00 AM
Abstract :
A methodology is investigated to optimize technological parameters to reduce distribution of circuit performance. Major attention is paid to treat all characteristics from device level to circuit level on one basis, namely technological parameters. The key point of the whole procedure is the quality of the analytical MOSFET model used for circuit simulations. Due to the physical description of our model, only three independent technological parameters have to be studied, namely the effective channel length, the oxide thickness, and the substrate doping concentration. These values are available directly or indirectly from measurements. The methodology is applied to optimize the oxide thickness for a 23-stage ring oscillator to obtain narrow delay distribution for low voltage application
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; circuit CAD; circuit analysis computing; circuit optimisation; delays; integrated circuit design; parameter estimation; semiconductor device models; advanced MOS technologies; analytical MOSFET model; circuit performance distribution; circuit simulations; effective channel length; low voltage application; narrow delay distribution; oxide thickness; substrate doping concentration; technological parameters optimisation; Analytical models; Circuit optimization; Circuit simulation; Delay; Doping; Low voltage; MOSFET circuits; Optimization methods; Ring oscillators; Semiconductor process modeling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
