Investigation of the AM/pm distortion in Doherty Power Amplifiers

Author

Piazzon, L. ; Giofre, R. ; Colantonio, P. ; Giannini, F.

Author_Institution

E.E.Dept., Univ. of Roma Tor Vergata, Rome, Italy

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

7

Lastpage

9

Abstract

In this paper, a theoretical investigation of the causes of the AM/PM distortion in Doherty Power Amplifiers is presented for the first time. The distortion sources are identified and a solution to mitigate the AM/PM conversion through the input termination of the Carrier amplifier is also highlighted. The relevant analysis is carried out using a simplified model of the active device and validated by means of full nonlinear model of a commercial GaN HEMT transistor. The role of the Miller effect in such a kind of distortion is stressed, demonstrating the existing link between output load modulation and phase distortion.

Keywords

III-V semiconductors; distortion; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; AM conversion; AM distortion; Doherty power amplifiers; GaN HEMT transistor; Miller effect; PM conversion; PM distortion; carrier amplifier; load modulation; phase distortion; Load modeling; Modulation; Nonlinear distortion; Phase distortion; Power amplifiers; Power generation; Solid modeling; AM/PM distortion; Doherty Amplifier; Load-Source Pull; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2014 IEEE Topical Conference on

Conference_Location

Newport Beach, CA

Print_ISBN

978-1-4799-2298-7

Type

conf

DOI

10.1109/PAWR.2014.6825729

Filename

6825729