DocumentCode :
1480571
Title :
Semi-insulating layers in InP obtained by Co or Fe ion implantation
Author :
Vidimari, F. ; Caldironi, M. ; Paola, A. Di ; Chen, R. ; Pellegrino, S.
Author_Institution :
Telettra SpA, Milano, Italy
Volume :
27
Issue :
10
fYear :
1991
fDate :
5/9/1991 12:00:00 AM
Firstpage :
817
Lastpage :
818
Abstract :
Ion implanted Co or Fe into n-type InP produced semi-insulating (SI) layers over a wide range of ion doses. The I/V characteristics of vertical metal-SI InP-n-type InP structures demonstrated resistivities up to 6*102 Omega cm at low bias levels and current densities as low as 12 mA/cm2 at 2.5 V for 400 keV ion energy implanted layers.
Keywords :
III-V semiconductors; cobalt; indium compounds; ion implantation; iron; 2.5 V; 400 keV; 600 ohmcm; I/V characteristics; InP semi-insulating layers; InP:Co; InP:Fe; current densities; ion energy implanted layers; ion implantation; range of ion doses; resistivities; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910513
Filename :
74946
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1480571
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