Title :
Epitaxial Structure Design of a Long-Wavelength InAlGaAs/InP Transistor Laser
Author :
Huang, Yong ; Ryou, Jae-Hyun ; Dupuis, Russell D.
Author_Institution :
Center for Compound Semicond., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
The threshold condition in long-wavelength InAlGaAs/InP transistor lasers is theoretically and numerically investigated. The optical gain in the In0.58Ga0.42As/In(Al0.4Ga0.6)As strained quantum well is calculated using a simplified k-selection model while intervalence band absorption is considered as the major intrinsic optical loss in the transistor lasers. It is found that room-temperature lasing of an N-InP/p-In(Al0.4Ga0.6)As/N-InP double heterostructure transistor laser is achieved only when the base thickness and doping level are within a specific narrow range. However, the selectable range is significantly expanded by means of facet coating, structure engineering, and quantum well design. By using a more compressively-strained or thicker quantum well as the active region in a separate confinement heterostructure transistor laser, it is possible to obtain a threshold current density as low as sub-100 A/cm2.
Keywords :
III-V semiconductors; aluminium compounds; current density; doping profiles; gallium arsenide; indium compounds; optical losses; quantum well lasers; In0.58Ga0.42As-In(Al0.4Ga0.6)As; InAlGaAs-InP; compressively-strained quantum well; doping level; double heterostructure transistor laser; epitaxial structure; facet coating; intervalence band absorption; intrinsic optical loss; long-wavelength transistor laser; optical gain; room-temperature lasing; simplified k-selection model; strained quantum well lasers; structural engineering; temperature 293 K to 298 K; threshold current density; DH-HEMTs; Indium phosphide; Mirrors; Niobium; Optical waveguides; Chemical vapor deposition; heterojunction bipolar transistors; semiconductor device modeling; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2011.2108636