Title :
Compact Modeling of Experimental n- and p-Channel FinFETs
Author :
Song, Jooyoung ; Yuan, Yu ; Yu, Bo ; Xiong, Weize ; Taur, Yuan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
The analytic potential model for symmetric double gate MOSFETs is verified and calibrated with experimental nand p-channel FinFET data over a wide range of gate lengths and bias regions. Quantum mechanical effects are incorporated in the model to reproduce the measured C-V characteristics. The long-channel mobility consists of both a phonon scattering term and a Coulomb scattering term with opposite field dependence. There is a slight mobility dependence on gate length due to the different strain effects in n-and p-channel FinFETs. The 2-D short-channel model has been validated in terms of the measured drain-induced barrier lowering (DIBL), threshold voltage rolloff, and subthreshold current slope of sub-100-nm nand p-channel FinFETs.
Keywords :
MOSFET; scattering; 2D short-channel model; C-V characteristics; Coulomb scattering; drain-induced barrier lowering; experimental n-channel FinFET; field dependence; long-channel mobility; mobility dependence; p-channel FinFET compact modelling; phonon scattering; quantum mechanical effects; subthreshold current slope; symmetric double gate MOSFET model; threshold voltage rolloff; Capacitance-voltage characteristics; Capacitive sensors; Current measurement; FinFETs; MOSFETs; Mechanical variables measurement; Particle scattering; Phonons; Quantum mechanics; Threshold voltage; Analytic potential; FinFET; double-gate (DG) MOSFET; gate-length dependent strain effects; quantum mechanical effects; short-channel effects; source–drain series resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2047067
