Title :
Cryogenic operation of GaAs bipolar transistors with inverted base doping
Author :
Dodd, Paul E. ; Lovejoy, M.L. ; Melloch, M.R. ; Lundstrom, Mark S.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
5/9/1991 12:00:00 AM
Abstract :
The low temperature characteristics of GaAs homojunction bipolar transistors with heavily-doped base layers are investigated. An increase in current gain of about a factor of five is observed when the transistors are cooled from 300 K to 77 K. This improvement is attributed to improved emitter injection efficiency and reduced perimeter recombination.
Keywords :
III-V semiconductors; bipolar transistors; cryogenics; doping profiles; electron-hole recombination; gallium arsenide; heavily doped semiconductors; 77 to 300 K; bipolar transistors; current gain; emitter injection efficiency; heavily-doped base layers; homojunction; inverted base doping; low temperature characteristics; perimeter recombination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910538
