DocumentCode :
1481585
Title :
Impact of Frequency From a Bipolar Applied Field on Dielectric Breakdown for Low- k Materials
Author :
Borja, Juan ; Plawsky, Joel L. ; Lu, T. -M ; Gill, William N.
Author_Institution :
Howard P. Isermann Dept. of Chem. & Biol. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume :
59
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1745
Lastpage :
1749
Abstract :
Assessing the lifetime of low-k dielectric materials integrated with Cu remains an important issue for interconnect reliability as designs pursue dielectric thicknesses below 100 nm. We present electrical tests and a mass transport model to assess Cu-catalyzed dielectric failure when transient fields are applied. We show that beyond a certain frequency of oscillation, dielectric lifetime can be enhanced up to two orders of magnitude. The proposed transport model predicts the dynamics observed experimentally and reproduces trends observed as we change field frequency and amplitude.
Keywords :
copper; dielectric materials; electric breakdown; low-k dielectric thin films; reliability; Cu; bipolar applied field; catalyzed dielectric failure; dielectric breakdown; electrical tests; interconnect reliability; low-k dielectric materials; mass transport model; Cathodes; Copper; Dielectric breakdown; Dielectrics; Ions; Materials; Bipolar applied field; breakdown; low- $k$ dielectrics; metal injection; reliability;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2190074
Filename :
6177233
Link To Document :
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