DocumentCode :
1482288
Title :
Advanced step and flash nanoimprint lithography using UV-sensitive hard mask underlayer material
Author :
Takei, Shohei ; Ogawa, Tomomi ; Deschner, R. ; Hanabata, M. ; Willson, C. Grant
Author_Institution :
Nissan Chem. Ind., Ltd., Chiba, Japan
Volume :
5
Issue :
2
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
117
Lastpage :
120
Abstract :
Step and flash nanoimprint lithography has many advantages such as high resolution, low line edge roughness and easy operation. However, resist peeling and defects present challenges that must be resolved in order to mass-produce advanced devices. A new approach using a spin-on UV-sensitive hard mask underlayer material with terminal methacrylate groups has been developed successfully, in order to obtain high adhesion by radical polymerisation between acrylate groups of the resist material and methacrylate groups of the underlayer during UV irradiation. The obtained high adhesion between the resist and underlayer was acceptable to improve the generated resist peeling and contamination problem when the template was removed from the resist after UV irradiation. The first demonstrated underlayer material indicated great properties, such as 80 nm straight profiles on 20 nm thin residual thickness and nanoimprint patterning replication on 200 mm wafer.
Keywords :
adhesion; masks; nanolithography; nanopatterning; photoresists; polymerisation; soft lithography; ultraviolet lithography; UV irradiation; acrylate groups; adhesion; contamination; methacrylate groups; nanoimprint patterning replication; peeling; radical polymerisation; size 20 nm; spin-on UV-sensitive hard mask underlayer material; step and flash nanoimprint lithography; terminal methacrylate groups;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2010.0014
Filename :
5457361
Link To Document :
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