High-Performance Metal–Insulator–Metal Capacitors Using Europium Oxide as Dielectric

Author

Padmanabhan, Revathy ; Bhat, Navakanta ; Mohan, S.

Author_Institution

Dept. of Electr. Commun. Eng., Indian Inst. of Sci., Bangalore, India

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1364

Lastpage

1370

Abstract

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu₂O₃ dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/μm²), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V² at 100 kHz), and argon anneal results in low leakage current density (3.2 ×10^-8 A/cm² at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.

Keywords

MIM devices; annealing; capacitors; correlation methods; current density; dielectric materials; europium compounds; DRAM applications; Eu₂O₃; X-ray photoelectron spectroscopy measurements; anneal conditions; dielectric materials; electrical characteristics; europium oxide; low leakage current density; metal-insulator-metal capacitors; surface chemical states; voltage coefficient of capacitance; Annealing; Argon; Capacitance; Capacitors; Leakage current; MIM capacitors; $hbox{Eu}_{2}hbox{O}_{3}$; metal–insulator–metal (MIM); voltage coefficient of capacitance (VCC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2188329

Filename

6177656