DocumentCode
1482528
Title
Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays
Author
Kouno, T. ; Kishino, Katsumi ; Sakai, Masayuki ; Inose, Yushi ; Kikuchi, A. ; Ema, K.
Author_Institution
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
Volume
46
Issue
9
fYear
2010
Firstpage
644
Lastpage
645
Abstract
Triangular GaN nanocolumn arrays, in which InGaN/GaN multiple quantum wells were integrated at the top region of each nanocolumn, were grown by Ti-mask selective-area growth of RF-plasma-assisted molecular beam epitaxy. In the nanocolumn arrays, a strong enhancement in light intensity at the specific wavelength of 479.4 nm was observed under low optical excitation, and then optically pumped stimulated emission occurred at near the specific wavelength (476.3 nm) under high optical excitation with a threshold excitation density of 400 kW/cm2. The light response of the nanocolumn array was numerically analysed by two-dimensional (2D) finite-difference time-domain and 2D plane-wave expansion methods, proving that the stimulated emission occurred in the 2D distributed feedback scheme.
Keywords
III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor quantum wells; stimulated emission; 2D distributed feedback scheme; 2D finite-difference time-domain method; 2D plane-wave expansion method; InGaN-GaN; RF-plasma-assisted molecular beam epitaxy; mask selective-area growth; multiple quantum wells; optical excitation; optically pumped stimulated emission; threshold excitation density; triangular nanocolumn arrays; wavelength 479.4 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0168
Filename
5457403
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