DocumentCode :
1482696
Title :
Numerical Study of ZnO-Based LEDs
Author :
Chiaria, Simone ; Goano, Michele ; Bellotti, Enrico
Author_Institution :
Dipt. di Elettron., Politec. di Torino, Turin, Italy
Volume :
47
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
661
Lastpage :
671
Abstract :
2-D numerical simulation is employed to assess a number of possible design approaches aimed at optimizing the internal quantum efficiency (IQE) of ZnO-based light-emitting diodes (LEDs) grown along the c-axis. First, the relative performance of similar ZnO-based and GaN-based LED structures is compared and discussed. Second, the effects on IQE of thickness, doping, and alloy composition of the MgZnO electron blocking layer (EBL) is studied in order to maximize the carrier confinement in the active region. The optimum number of quantum wells is also addressed, and different strategies for barrier doping are considered, showing that, if the EBL is doped p-type, a similar doping in the barriers is not required to compensate for the spontaneous and piezoelectric interface charges and to enhance hole transport. Different choices of the geometrical and doping parameters of the n-type access region are considered, and the impact of different values of the electron mobility is determined. Finally, the analysis of a ZnO/BeZnO LED structure suggests that the incorporation of BeZnO layers does not provide significant advantages.
Keywords :
II-VI semiconductors; electron mobility; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; 2-D numerical simulation; LED; ZnO; ZnO-based light-emitting diodes; alloy composition; barrier doping; carrier confinement; doping parameters; electron blocking layer; electron mobility; hole transport; internal quantum efficiency; n-type access region; piezoelectric interface charges; quantum wells; Doping; Face; Light emitting diodes; Substrates; Zinc oxide; BeZnO; MgZnO; ZnO; internal quantum efficiency; light-emitting diodes; numerical simulation; polarization-induced Stark effect;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2104940
Filename :
5739676
Link To Document :
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