DocumentCode
1482745
Title
A new approach to optimizing the base profile for high-speed bipolar transistors
Author
Van Wijnen, Paul J. ; Gardner, Robert D.
Author_Institution
Philips Components/Signetics, Sunnyvale, CA, USA
Volume
11
Issue
4
fYear
1990
fDate
4/1/1990 12:00:00 AM
Firstpage
149
Lastpage
152
Abstract
It is shown using first-order analytical analysis and extensive device simulations that, for a given base resistance and peak base doping, a uniform base profile gives a higher cutoff frequency than a graded profile. This result is explained by the narrower base width that can be achieved with a uniform profile, which more than compensates for the lack of the aiding electric field present in graded-base transistors.<>
Keywords
bipolar transistors; doping profiles; semiconductor device models; base profile optimisation; base resistance; base width; cutoff frequency; device simulations; first-order analytical analysis; high-speed bipolar transistors; peak base doping; uniform base profile; Analytical models; Bipolar transistors; Capacitance; Cutoff frequency; Doping profiles; Electric resistance; Electrons; Hafnium; Research and development; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.61777
Filename
61777
Link To Document