Consideration of low-frequency noise in MOSFETs for analog performance

Low-frequency noise characteristics of MOSFETs have been studied in terms of their dependence on metal interconnect perimeter length, device W/L ratio, and gate-biasing voltage. In contrast to the theoretical model, a noise intensity increasing with lowering gate biasing was observed, which suggests that a compromise between noise performance and gain/offset voltage needs to be carefully examined in analog circuit design. Low-frequency noise was also found to be dependent on W/L ratio in devices with the same gate area, which should be considered in future device scaling.