• DocumentCode
    1483082
  • Title

    MEMS Hall effect pressure sensor

  • Author

    Hui-Yang Yu ; Ming Qin ; Meng Nie

  • Author_Institution
    Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
  • Volume
    48
  • Issue
    7
  • fYear
    2012
  • Firstpage
    393
  • Lastpage
    394
  • Abstract
    A novel micromachined pressure sensor is reported. The sensor works based on the Hall effect. The structure and fabrication process of this sensor are presented. During measurement, the applied pressure changes from 30 to 110 kPa. Test results show that the output Hall voltage of the sensor increases linearly with the pressure applied on the membrane and the sensitivity is 22.8 V/hPa. Furthermore, it is found that the output voltage is composed of two parts: the Hall voltage and the offset voltage. The offset voltage also changes with the applied pressure, but is much smaller than the Hall voltage.
  • Keywords
    Hall effect transducers; micromachining; microsensors; pressure sensors; Hall voltage; MEMS Hall effect pressure sensor; micromachined pressure sensor; offset voltage; pressure 30 kPa to 110 kPa; sensor fabrication process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.4052
  • Filename
    6177785