DocumentCode
1483082
Title
MEMS Hall effect pressure sensor
Author
Hui-Yang Yu ; Ming Qin ; Meng Nie
Author_Institution
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
Volume
48
Issue
7
fYear
2012
Firstpage
393
Lastpage
394
Abstract
A novel micromachined pressure sensor is reported. The sensor works based on the Hall effect. The structure and fabrication process of this sensor are presented. During measurement, the applied pressure changes from 30 to 110 kPa. Test results show that the output Hall voltage of the sensor increases linearly with the pressure applied on the membrane and the sensitivity is 22.8 V/hPa. Furthermore, it is found that the output voltage is composed of two parts: the Hall voltage and the offset voltage. The offset voltage also changes with the applied pressure, but is much smaller than the Hall voltage.
Keywords
Hall effect transducers; micromachining; microsensors; pressure sensors; Hall voltage; MEMS Hall effect pressure sensor; micromachined pressure sensor; offset voltage; pressure 30 kPa to 110 kPa; sensor fabrication process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.4052
Filename
6177785
Link To Document