• DocumentCode
    1483093
  • Title

    High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 μm

  • Author

    Gupta, J.A. ; Bezinger, A. ; Barrios, P.J. ; Lapointe, J. ; Poitras, D. ; Waldron, Peter

  • Author_Institution
    Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
  • Volume
    48
  • Issue
    7
  • fYear
    2012
  • Firstpage
    396
  • Lastpage
    397
  • Abstract
    A lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 μm. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the v3, R7 vibrational absorption transitions.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; infrared spectroscopy; quantum well lasers; GaSb; InGaAsSb-AlInGaAsSb; high-resolution methane spectroscopy; lateral etched-grating process; laterally-coupled index-grating distributed feedback laser diode; methane gas; molecular beam epitaxy; singlemode distributed feedback laser diodes; type-I quantum well active regions; vibrational absorption transitions; wavelength 3.23 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0109
  • Filename
    6177787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1483093