Title :
Interband tunneling in heterostructure tunnel diodes
Author :
Yang, Rui Q. ; Sweeny, M. ; Day, D. ; Xu, J.M.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
fDate :
3/1/1991 12:00:00 AM
Abstract :
A particular type of tunnel diode, incorporating a wideband tunnel barrier, is studied. Simple analytic expressions are developed for estimating the tunneling coefficients to guide and optimize the design of heterostructure interband tunnel devices. The interband tunneling in such heterostructure tunnel diodes is modeled by a two-band Schrodinger equation. For a certain family of InGaAs/InA/GaAs p-n junction tunnel diodes, the interband transmission coefficients are calculated. The estimated peak currents are shown to compare very favorably with experimental results
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; p-n heterojunctions; tunnel diodes; InGaAs-InAlGaAs; heterostructure tunnel diodes; interband transmission coefficients; interband tunnel devices; p-n junction; peak currents; tunneling coefficients; two-band Schrodinger equation; wideband tunnel barrier; Conducting materials; Doping; Helium; Hydrogen; P-n junctions; Physics; Power dissipation; Power semiconductor switches; Semiconductor diodes; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
