Title :
Hot carrier hardness analysis of submicrometer LDD devices
Author :
Hänsch, Wilfried ; Mazure, Carlos ; Lill, A. ; Orlowski, Marius K.
Author_Institution :
Siemens AG, Munchen, Germany
fDate :
3/1/1991 12:00:00 AM
Abstract :
A detailed analysis of the degradation of various lightly doped drain (LDD) devices is presented. Technology parameters that are varied are gate length, LDD n-dose, and energy for devices with 20-nm gate oxide. Different DC stress conditions are investigated. To gain insight into the degradation process a simulation tool is used that self-consistently calculates the oxide damage during a DC stress experiment. This enables the location and amount of oxide charges and interface states due to hot carrier injection to be obtained. The relationship between stress-induced damage and device hot carrier hardness is discussed
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; 20 nm; DC stress conditions; LDD n-dose; device hot carrier hardness; gate length; gate oxide; hot carrier injection; lightly doped drain; oxide damage; simulation tool; stress-induced damage; submicrometer LDD devices; Brain modeling; Degradation; Doping; Hot carrier injection; Hot carriers; Implants; MOSFET circuits; Reliability engineering; Space technology; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
