DocumentCode :
1485472
Title :
Very-High Temperature (200 ^{\\circ} C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer
Author :
Shi, Jin-Wei ; Huang, H.W. ; Kuo, F.-M. ; Sheu, J.K. ; Lai, W.C. ; Lee, M.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Volume :
22
Issue :
14
fYear :
2010
fDate :
7/15/2010 12:00:00 AM
Firstpage :
1033
Lastpage :
1035
Abstract :
We demonstrate a novel type of linear cascade green light-emitting diode (LED) arrays as a light source for in-car or harsh environment plastic optical fiber (POF) communications. To further enhance its dynamic and static performance, an InGaN layer is inserted between an n-type GaN cladding layer and InGaN-GaN multiple quantum wells as an efficient current spreading layer. Compared with the control device without that layer, our three-LED cascade array demonstrates a smaller turn-on voltage (9.3 versus 11 V at 20 mA) and a larger output power (25.5 versus 22.5 mW at 180 mA), corresponding to an enhancement of around 31% in wall-plug efficiency. Furthermore, under the constant voltage bias of an in-car battery (12 V), our three-LED array exhibits an electrical-to-optical 3-dB bandwidth (100 versus 40 MHz) performance superior to that of the control device. Even under high-temperature dynamic operation, we observe that the InGaN insertion layer gives strong enhancement of modulation speed with negligible degradation of the output power, unlike the red resonant-cavity LEDs conventionally used for POF. We achieve 200-Mb/s error-free transmission at 200°C which is the highest operation temperature among all the reported high-speed LEDs.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; optical fibre communication; wide band gap semiconductors; InGaN; error-free transmission; green light emitting diodes; high speed operation; high-temperature dynamic operation; insertion layer; light source; linear cascade green light-emitting diode; plastic optical fiber communications; temperature 200 degC; very-high temperature; Cascade; GaN; light-emitting diodes (LEDs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2049259
Filename :
5460921
Link To Document :
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