Investigation of the Statistical Variability of Static Noise Margins of SRAM Cells Using the Statistical Impedance Field Method

Author

El Sayed, Karim ; Wettstein, Andreas ; Simeonov, Simeon D. ; Lyumkis, Eugeny ; Polsky, Boris

Author_Institution

Synopsys, Inc., Mountain View, CA, USA

Volume

59

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1738

Lastpage

1744

Abstract

The statistical variability of the static noise margin of a six-transistor bulk complementary metal-oxide-semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided design simulations. The SRAM cell is created through 3-D process simulations of the entire cell as a single structure. The process flow is based on a typical 32-nm technology. The effects of RDFs on the cell performance are investigated using the highly efficient statistical impedance field method.

Keywords

CAD; CMOS memory circuits; SRAM chips; statistical analysis; 3D technology computer-aided design simulations; RDF; SRAM cells; random doping fluctuations; six-transistor bulk complementary metal-oxide-semiconductor; size 32 nm; static noise margins; static random access memory cell; statistical impedance field method; statistical variability; Computational modeling; Doping; Inverters; Logic gates; Random access memory; Semiconductor process modeling; Transistors; Cell stability; numerical simulation; random doping fluctuation (RDF) technology computer-aided design (TCAD); static noise margin (SNM); static random access memory (SRAM); variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2189860

Filename

6178781