DocumentCode
1486734
Title
Effect of crystalline anisotropy in AMRAM cells
Author
Gadbois, J. ; Zhu, J.G. ; Vavra, W. ; Hurst, A.
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
33
Issue
5
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
3301
Lastpage
3303
Abstract
The effect of crystalline anisotropy on the device signal and edge switching thresholds of both NiFeCo and NiFe anisotropic magnetoresistive random access memory (AMRAM) cells has been simulated. The NiFe device demonstrated a greater signal range with an edge switching threshold of 5 Oe, while the NiFeCo device showed a smaller range of signal but with an edge switching threshold of 13 Oe
Keywords
cobalt alloys; iron alloys; magnetic anisotropy; magnetic storage; magnetoresistive devices; nickel alloys; random-access storage; AMRAM cell; NiFe; NiFeCo; anisotropic magnetoresistive random access memory; crystalline anisotropy; edge switching threshold; signal range; Anisotropic magnetoresistance; Computational modeling; Conducting materials; Crystallization; Magnetic anisotropy; Magnetic domains; Magnetic materials; Magnetic switching; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Saturation magnetization;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.617924
Filename
617924
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