DocumentCode :
1487073
Title :
Deep UV 
/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor
Author :
Chiu, C.J. ; Shih, S.S. ; Weng, Wen-Yin ; Chang, Shoou-Jinn ; Hung, Z.D. ; Tsai, Tsung-Ying
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
24
Issue :
12
fYear :
2012
fDate :
6/15/2012 12:00:00 AM
Firstpage :
1018
Lastpage :
1020
Abstract :
The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3 × 10-9 A to 7.97 × 10-5 A, as we illuminated the sample with λ = 250-nm UV light when VG is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3 × 105 for the fabricated Ta2O5/a-ZITO TFT.
Keywords :
amorphous semiconductors; carrier mobility; indium compounds; optical fabrication; phototransistors; tantalum compounds; thin film transistors; tin compounds; zinc compounds; TFT; Ta2O5-ZnInSnO; UV light illumination; carrier mobility; current measurement; deep UV thin film phototransistor; deep-UV-to-visible rejection ratio; deep-ultraviolet sensitive a-ZITO thin-film-transistor; gate dielectrics; subthreshold swing; threshold voltage; voltage 0.75 V; wavelength 250 nm; Current measurement; Dielectric measurements; Dielectrics; Logic gates; Photodetectors; Semiconductor device measurement; Thin film transistors; ${rm Ta}_{2}{rm O}_{5}$ ; a-ZITO; photo-transistor;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2193564
Filename :
6179308
Link To Document :
