Title :
MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN
Author :
Ting, Shao-Ying ; Chen, Horng-Shyang ; Chang, Wen-Ming ; Huang, Jeng-Jie ; Liao, Che-Hao ; Chen, Chih-Yen ; Hsieh, Chieh ; Yao, Yu-Feng ; Chen, Hao-Tsung ; Kiang, Yean-Woei ; Yang, Chih-Chung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2012 12:00:00 AM
Abstract :
A CdZnO/n-ZnO multiple-quantum-well (QW) light-emitting diode (LED), with the QWs and n+-ZnO capping layer grown with molecular beam epitaxy on p-GaN, which is grown with metal-organic chemical vapor deposition, is fabricated and characterized. Because of the weak carrier localization mechanism in the ZnO-based LED, its defect emission is quite strong and dominates the LED output when injection current is low. The blue shift of the LED output spectrum in applying a forward-biased voltage and the large blue-shift range in increasing injection current show the different behaviors of such a ZnO-based LED from those of a nitride LED.
Keywords :
II-VI semiconductors; III-V semiconductors; MOCVD; cadmium compounds; gallium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor quantum wells; spectral line shift; wide band gap semiconductors; zinc compounds; CdZnO-ZnO; GaN; MBE; MOCVD; blue shift; capping layer; carrier localization mechanism; defect emission; forward biased voltage; injection current; metal organic chemical vapor deposition; molecular beam epitaxial growth; multiple quantum well light emitting diode; Chemical vapor deposition; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Plasma temperature; Scanning electron microscopy; Zinc oxide; CdZnO/ZnO quantum well; light-emitting diode; p-GaN;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2190397
