Title :
Optimized preparation conditions of RF co-sputtered TbFeCo magneto-optical storage films
Author :
Schone-Warnefeld, A. ; Weller, D. ; Reim, W. ; Rupp, G. ; Marko, W. ; Hülsing, H. ; Schuster, K. ; Vieth, M. ; Weissenberger, V. ; Hillenbrand, B.
Author_Institution :
Siemens AG, Erlangen, West Germany
fDate :
11/1/1988 12:00:00 AM
Abstract :
Amorphous TeFeCo films have been prepared by RF co-sputtering from two composite Tb26Fe74 and Tb26Co74 (area %) targets. Chemical, structural, magnetic and magnetooptical properties of these films have been investigated systematically as functions of argon pressure and applied bias voltage during sputtering. For this particular preparation system, optimum sputtering parameters with respect to a high carrier-to-noise ratio have been found to be a 20-40 V bias at 8×10-3 mbar argon pressure. Dynamic write-read tests on 5-1/4-in polycarbonate disks give a carrier-to-noise ratio of 55 dB at 6-MHz carrier frequency and 30-kHz bandwidth, at a bit size of 1.4 μm
Keywords :
Kerr magneto-optical effect; cobalt alloys; coercive force; ferrimagnetic properties of substances; iron alloys; magnetic properties of amorphous substances; magnetic thin films; magneto-optical recording; sputtered coatings; terbium alloys; 1.4 micron; 20 to 40 V; 30 kHz; 6 MHz; 8×10-3 mbar; Ar pressure; RF co-sputtering; Tb26Co74; Tb26Fe74; TbFeCo; applied bias voltage; bandwidth; bit size; carrier frequency; carrier-to-noise ratio; dynamic write read tests; magnetic properties; magnetooptical properties; optimum sputtering parameters; polycarbonate disks; structural properties; Amorphous magnetic materials; Amorphous materials; Argon; Chemicals; Iron; Magnetic films; Magnetic properties; Radio frequency; Sputtering; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
