Title :
A new temporary bonding technology with spin-on glass and hydrogenated amorphous Si for 3D LSIs
Author :
Hashiguchi, Hironori ; Fukushima, Tetsuya ; Kino, Hitoshi ; Lee, Ki-Won ; Tanaka, T. ; Koyanagi, Mitsumasa
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes. A XeCl excimer laser was irradiated to the a-Si:H layer through the glass wafers for debonding the chips. A novel via-last/backside-via 3D integration process using temporary SOG bonding was also proposed for advanced multichip-to-wafer 3D integration with self-assembly.
Keywords :
amorphous semiconductors; bonding processes; elemental semiconductors; excimer lasers; large scale integration; self-assembly; silicon; wafer bonding; xenon compounds; 3D LSI; CVD; SOG; Si:H; XeCl; XeCl excimer laser; chip thinning; debonding layer; glass wafer; high-temperature chemical vapor deposition; hydrogenated amorphous silicon; multichip-to-wafer 3D integration; self-assembly; spin-on glass; square chips; temporary bonding technology; via-last-backside-via 3D integration process; Bonding; Chemicals; Glass; Plasma temperature; Silicon; Three-dimensional displays; 3D Integration; Chip on Wafer; Temporary Bonding/De-Bonding;
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
DOI :
10.1109/ICEP.2014.6826664
