Title :
Multi-Slot Main Memory System for Post DDR3
Author :
Lee, Jaejun ; Lee, Sungho ; Nam, Sangwook
Author_Institution :
Appl. Electromagn. Lab., Seoul Nat. Univ., Seoul, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
This brief introduces a suitable architecture for a high-data rate and high-density system using bidirectional single-ended signaling. For chip-to-chip interconnections requiring high speed and high density for the main memory system, an SSTL-II-based structure was previously used. However, this structure is no longer applicable for higher speeds at higher densities. By using an optimum reflection coefficient at the junction of a branch, a multislot system acts in the same way as a point-to point system. This architecture significantly improves the signal integrity. The simulated jitter and eye openings, including transmission line loss, were improved by 53.4% for write operation and 65.1% for read operations at 3.2 Gbps under heavy loading conditions. The peak-to-peak time jitters of 67.1 and 72.0 ps were measured at 3.3 Gbps.
Keywords :
DRAM chips; equalisers; integrated circuit interconnections; jitter; DRAM; SSTL-II-based structure; bidirectional single- ended signaling; bit rate 3.3 Gbit/s; dynamic random-access memory; high-density system; memory system; multislot main memory system; multislot system; optimum reflection coefficient; peak-to-peak time jitters; point-to point system; signal integrity; transmission line loss; Electric impedance; equalizers; interconnections; intersymbol interference (ISI); jitter; noise; routing;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2010.2047312