Title :
Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes
Author :
Zhou, Qiugui ; Liu, Han-Din ; Mcintosh, Dion C. ; Hu, Chong ; Zheng, Xiaoguang ; Campbell, Joe C.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report 4H-SiC p-i-n structure avalanche photodiodes (APDs) isolated by proton implantation. These APDs achieved low dark current (670 nA/cm2 at a gain of 1000) and gains as high as 105. The external quantum efficiency was 44% at 278 nm.
Keywords :
avalanche photodiodes; dark conductivity; hydrogen; ion implantation; p-i-n diodes; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC avalanche photodiodes; SiC:H; dark current; external quantum efficiency; p-i-n structure; proton implantation; ultraviolet detectors; wavelength 278 nm; Avalanche photodiode (APD); photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2032524
