DocumentCode :
148914
Title :
Formic acid treatment with Pt catalyst for Cu direct bonding at low temperature
Author :
Suga, Takashi ; Masakate, Akaike ; Wenhua Yang ; Matsuoka, N.
Author_Institution :
Dept. Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2014
fDate :
23-25 April 2014
Firstpage :
644
Lastpage :
647
Abstract :
The paper describes a new process of Cu-Cu direct bonding at a temperature lower than 200°C in atmospheric pressure. The method consists of reduction process of Cu oxide using formic acid treatment and subsequent generation of Cu nano-particles by means of Pt catalyst. The main idea of the proposed method is that due to Pt catalytic effect, combined to the conventional formic acid treatment, a part of the formic acid is decomposed to generate hydrogen radicals to reduce the oxide of the Cu surface, CuO and produce Cu formats very effectively. As the result, nano-particles of Cu are precipitated from the formats on the Cu surface and a tight bonded interface can be formed at a temperature below a 200°C. Cu surface was heated in water vapor to enhance the oxidation process and compared regarding to the precipitation of the Cu nano-particles.
Keywords :
catalysts; copper compounds; hydrogen; integrated circuit bonding; nanoparticles; platinum; thermal management (packaging); CuO; Pt; atmospheric pressure; copper nanoparticles; copper oxide reduction process; copper-copper direct bonding; formic acid treatment; hydrogen radicals; platinum catalyst; platinum catalytic effect; water vapor; Bonding; Heat treatment; Plasma temperature; Surface morphology; Surface treatment; Water heating; bonding; catalysst; copper; direct bonding; formic acid; low temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
Type :
conf
DOI :
10.1109/ICEP.2014.6826759
Filename :
6826759
Link To Document :
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