Title :
A Backside-Illuminated Image Sensor With 200 000 Pixels Operating at 250 000 Frames per Second
Author :
Le, Cuong Vo ; Etoh, T.Goji ; Nguyen, H.D. ; Dao, V.T.S. ; Soya, H. ; Lesser, Michael ; Ouellette, David ; van Kuijk, H. ; Bosiers, J. ; Ingram, G.
Author_Institution :
Kinki Univ., Higashi-Osaka, Japan
Abstract :
In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.
Keywords :
CCD image sensors; backside illumination; backside-illuminated image sensor; charge-carrier multiplication; high-speed image sensor; storage image sensor; Buffer storage; Charge coupled devices; Electrons; Image sensors; Image storage; Intersymbol interference; Lighting; Noise level; Pixel; Testing; in situ storage image sensor (ISIS); Charge-carrier multiplication (CCM); high sensitivity; high speed;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2030601
