An Investigation of the Effect of Elastic Constants of Spacer in n-FETs CESL Stressor

Author

Huang, Chien-Chao ; Chen, Hao-Yu ; Chen, Hung-Keng ; Lee, Sanboh

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

638

Lastpage

640

Abstract

The strained-Si approach from the contact etching stop layer (CESL) stressor with two kinds of Young´s modulus spacer has been investigated. From the TSUPREM4 simulation of the CESL tensile stressor, the tensile channel stress induced by the SiN spacer material is found to be 60% more than that by the oxide spacer material. With the use of a tensile CESL stressor for the 90-nm n-FETs, an extra 10% enhancement in drive current I_Dsat was obtained in the device with a high Young´s modulus (270-290 GPa) SiN spacer as compared with that with a low Young´s modulus (66 GPa) SiO₂ spacer. The electrical data are in good agreement with the prediction of the stress simulation.

Keywords

Young´s modulus; elastic constants; etching; field effect transistors; simulation; CESL tensile stressor; SiN spacer material; TSUPREM4 simulation; Youngs modulus spacer; contact etching stop layer stressor; elastic constants; n-FET; stress simulation; Poisson´s ratio; Young´s modulus; spacer; strained Si; tensile stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2048191

Filename

5464303