High-Frequency Noise Modeling of InGaP/GaAs HBT With Base-Contact Capacitance and AC Current Crowding Effect

Author

Huang, Shou-Chien ; Tang, Wen-Bin ; Hsin, Yue-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

30

Issue

11

fYear

2009

Firstpage

1125

Lastpage

1127

Abstract

A heterojunction-bipolar-transistor (HBT) noise model including the base-impedance effect is presented, which takes into account the base-contact capacitance and ac current crowding effect. The proposed noise model describes well the high-frequency noise characteristics of InGaP/GaAs HBTs in the presence of base-impedance effect. Good agreement is observed between the measured and calculated noise parameters for the different sizes of InGaP/GaAs HBTs. We found that the effect of ac current crowding on noise parameters is more critical than that of base-contact capacitance.

Keywords

III-V semiconductors; capacitance; electrical contacts; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device noise; AC current crowding effect; HBT; InGaP-GaAs; ac current crowding effect; base-contact capacitance; base-impedance effect; heterojunction-bipolar-transistor noise model; high-frequency noise modeling; AC current crowding effect; heterojunction bipolar transistor (HBT); noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2031132

Filename

5276857