Title :
Solder Pump Technology for Through-Silicon via Fabrication
Author :
Gu, Jiebin ; Pike, W.T. ; Karl, W.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
fDate :
6/1/2011 12:00:00 AM
Abstract :
We present a solder pump method that injects conductive material into a device wafer to form low-resistance through-silicon vias (TSVs). Building on previous work that exploits the Gibbs-Thomson effect, this pump geometry uses a reusable wafer set to produce a pattern of U-shaped reservoirs into which solder balls are loaded. After introduction of the device wafer with a corresponding pattern of through-wafer-etched holes, reflow results in the complete transfer of the solder from the reservoirs into the device structure to produce the vias. This approach forms the basis of a rapid low-cost batch-fabrication process for TSVs.
Keywords :
conducting materials; electric resistance; etching; semiconductor device packaging; solders; three-dimensional integrated circuits; Gibbs-Thomson effect; U-shaped reservoir; conductive material; device structure; device wafer; low-cost batch-fabrication process; low-resistance through-silicon vias; pump geometry; reusable wafer set; semiconductor device packaging; solder ball; solder pump technology; through-silicon via fabrication; through-wafer-etched hole; Fabrication; Feeds; Geometry; Reservoirs; Silicon; Surface tension; Through-silicon vias; Microelectromechanical devices; semiconductor device packaging; through-silicon via (TSV);
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2011.2127460