Title :
A proposed OEIC receiver using MESFET photodetector
Author :
Chakrabarti, P. ; Rajamani, V.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fDate :
4/1/1999 12:00:00 AM
Abstract :
An optical receiver configuration based on the concept of using a single optically gated metal-semiconductor-fieid-effect transistor (MESFET) to perform the function of a photodetector and preamplifier has been introduced. The proposed optoelectronic integrated circuit (OEIC) receiver has been analyzed theoretically. A simplified noise model of the receiver has also been developed. Results have been presented for an OEIC receiver based on InGaAs MESFET supposed to be fabricated with matured InGaAs-InP MMIC technology. Theoretical results based on a simplistic noise model reveal that the proposed OEIC receiver has superior performance characteristics over the existing optical receivers
Keywords :
MESFET integrated circuits; gallium arsenide; indium compounds; integrated circuit modelling; integrated optoelectronics; optical fabrication; optical noise; optical receivers; InGaAs; InGaAs MESFET; InGaAs-InP; InGaAs-InP MMIC technology; MESFET; MESFET photodetector; OEIC receiver; optical receiver configuration; optoelectronic integrated circuit; performance characteristics; photodetector; preamplifier; simplistic noise model; single optically gated metal-semiconductor-fieid-effect transistor; Indium gallium arsenide; Integrated circuit noise; Integrated circuit technology; MESFETs; MMICs; Optical noise; Optical receivers; Optoelectronic devices; Photodetectors; Preamplifiers;
Journal_Title :
Lightwave Technology, Journal of
