Title :
Strengthening for sc-Si Solar Cells by Surface Modification With Nanowires
Author :
Chen, Chi-Nan ; Huang, Chuan-Torng ; Chao, Chen-Liang ; Hou, Max Ti-Kuang ; Hsu, Wen-Ching ; Yeh, J. Andrew
Author_Institution :
Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
6/1/2011 12:00:00 AM
Abstract :
Bending strength of single-crystalline silicon (sc-Si) substrates enhanced by forming silicon nanowires (SiNWs) on the surfaces has been investigated for the application of sc-Si solar cells. As operated under the three-point-bending test, the 40-mm-long, 20-mm-wide, and 0.61-mm-thick sc-Si substrates show a high bending strength of 1.02 ± 0.11 GPa and maintain bulk properties. By this strengthening method, a hand-bent 6-in 0.23-mm-thick sc-Si solar cell shows the displacement of 35 mm and the curvature radius of 75 mm. Moreover, the bending strengths of strengthening sc-Si substrates for the SiNW depths of 1, 2, and 4 μm are 2.1, 4.3, and 6 times larger than that of pristine sc-Si substrates (i.e., 0.17 ± 0.01 GPa), respectively.
Keywords :
bending strength; elemental semiconductors; nanowires; silicon; solar cells; Si; bending strength; curvature radius; sc-Si solar cell; silicon nanowires; single-crystalline silicon substrate; size 0.61 mm; size 1 mum; size 2 mum; size 20 mm; size 4 mum; size 40 mm; surface modification; three-point bending test; Neodymium; Nitrogen; Photovoltaic cells; Silicon; Stress; Substrates; Surface treatment; Nanotechnology; solar energy and stress;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2011.2127459
