Title :
A 4K Josephson memory
Author :
Suzuki, H. ; Fujimaki, N. ; Tamura, H. ; Imamura, T. ; Hasuo, S.
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
fDate :
3/1/1989 12:00:00 AM
Abstract :
The authors describe the design and experimental performance of a 4 K×1-bit Josephson (RAM). For high-speed memory operation, the authors have developed a compact AND gate for the decoder, a high-voltage driver gate, and a capacitively coupled single-flux quantum memory cell. The 4 K memory was designed using these gates and cell and was fabricated with Nb/AlOx/Nb junctions. The minimum access time was 590 ps, and the total power dissipation was 19 mW
Keywords :
aluminium compounds; integrated circuit technology; integrated memory circuits; niobium; random-access storage; superconducting junction devices; superconducting memory circuits; 19 mW; 4 kbit; 590 ps; AND gate; Josephson memory; Nb-AlOx-Nb junctions; RAM; access time; capacitively coupled single-flux quantum memory cell; experimental performance; high-speed memory operation; high-voltage driver gate; power dissipation; Decoding; Equivalent circuits; Josephson junctions; Logic gates; Niobium; Power dissipation; Power measurement; Time measurement; Timing; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
