DocumentCode :
1493795
Title :
Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible Charge-Coupled Device
Author :
Holland, Stephen E. ; Kolbe, William F. ; Bebek, Christopher J.
Author_Institution :
Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
Volume :
56
Issue :
11
fYear :
2009
Firstpage :
2612
Lastpage :
2622
Abstract :
A 12.3-megapixel charge-coupled device (CCD) that can be operated at high substrate-bias voltages has been developed in support of a proposal to study dark energy. The pixel size is 10.5 mum, and the format is 3512 rows by 3508 columns. The CCD is nominally 200 mum thick and is fabricated on high-resistivity n-type silicon that allows for fully depleted operation with the application of a substrate-bias voltage. The CCD is required to have high quantum efficiency (QE) at near-infrared wavelengths, low noise and dark current, and an rms spatial resolution of less than 4 mum. In order to optimize the spatial resolution and QE, requirements that have conflicting dependences on the substrate thickness, it is necessary to operate the CCD at large substrate-bias voltages. In this paper, we describe the features of the CCD, summarize the performance, and discuss in detail the device-design techniques used to realize 200-mum-thick CCDs that can be operated at substrate-bias voltages in excess of 100 V.
Keywords :
CCD image sensors; dark conductivity; elemental semiconductors; silicon; 12.3-megapixel charge-coupled device; CCD; Si; back-illuminated charge-coupled device; dark current; dark energy; device-design techniques; fully depleted charge-coupled device; high-resistivity n-type silicon; high-voltage compatible charge-coupled device; near-infrared wavelengths; quantum efficiency; size 200 mum; substrate thickness; substrate-bias voltage; Charge coupled devices; Dark current; Dark energy; Electromagnetic wave absorption; Proposals; Silicon; Space technology; Spatial resolution; Telescopes; Voltage; Charge-coupled device (CCD); fully depleted; high voltage; high-resistivity substrate; static induction transistor (SIT);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2030631
Filename :
5280320
Link To Document :
بازگشت