Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric

Author

Wu, Zhen-Cheng ; Chiang, Chiu-Chih ; Wu, Wei-Hao ; Chen, Mao-Chieh ; Jeng, Shwang-Ming ; Li, Lain-Jong ; Jang, Syun-Ming ; Yu, Chen-Hua ; Liang, Mong-Song

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

22

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

263

Lastpage

265

Abstract

This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage for application to a Cu damascene integration scheme.

Keywords

copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; leakage currents; 50 nm; Cu; Cu damascene structure; Frenkel-Poole emission; SiC; SiC etching stop layer; SiN; SiN etching stop layer; bulk leakage; intermetal dielectric; leakage mechanism; methylsilane-doped low-K CVD oxide; organosilicate glass; trapped electrons; Annealing; Dielectrics; Etching; Glass; Radio frequency; Silicon carbide; Silicon compounds; Temperature; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.924836

Filename

924836