Spiral inductors on Si p/p/sup +/ substrates with resonant frequency of 20 GHz

Author

Han-Su Kim ; Dawei Zheng ; Becker, A.J. ; Ya-Hong Xie

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA

Volume

22

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

275

Lastpage

277

Abstract

Porous Si of up to 200 μm in thickness has been used to fabricate high-performance spiral inductors on heavily doped Si substrates (0.007 /spl Omega/-cm). Spiral inductors with L/spl sim/5.7 nH are fabricated demonstrating Q_max/spl sim/29 at 7 GHz and f/sub r/>20 GHz. The resonant frequency (f/sub r/) increases with increasing porous Si thickness and saturates beyond 120 μm. A corresponding decrease in total capacitance is observed. Q_max increases monotonically with porous Si layer thickness to beyond 200 μm. For inductors with a smaller footprint, Q_max begins to saturate at less than 100-μm thick porous Si.

Keywords

MMIC; capacitance; elemental semiconductors; heavily doped semiconductors; inductors; isolation technology; porous semiconductors; silicon; 0.007 ohmcm; 100 to 200 mum; 20 GHz; 7 GHz; Q/sub max/; RF isolation; RFIC; Si; Si p/p/sup +/ substrates; footprint; heavily doped Si substrates; passive components; porous Si; porous Si thickness; resonant frequency; spiral inductors; total capacitance; Anodes; Capacitance; Hafnium; Inductors; Metallization; Radio frequency; Resonance; Resonant frequency; Spirals; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.924840

Filename

924840