Title :
On the mobility versus drain current relation for a nanoscale MOSFET
Author :
Lundstrom, Mark S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
The dependence of the linear and saturated drain current of a nanoscale MOSFET on the near-equilibrium, inversion layer mobility of a long-channel device from the same technology is examined. Simple expressions developed from a scattering theory of the MOSFET provide a quantitative relation between the long-channel mobility and the short-channel drain current. The theory explains the commonly observed mobility-dependence of the linear and saturated drain currents in present-day deep submicron MOSFETs, and the results can be extrapolated all the way to the ballistic limit.
Keywords :
MOSFET; carrier mobility; high field effects; inversion layers; nanotechnology; semiconductor device models; ballistic limit; deep submicron MOSFETs; linear drain current; long-channel mobility; mobility versus drain current relation; nanoscale MOSFET; near-equilibrium inversion layer mobility; saturated drain current; scattering theory; short-channel drain current; velocity overshoot; Backscatter; Charge carrier mobility; Current measurement; Helium; MOSFET circuits; Nanoscale devices; Predictive models; Region 7; Scattering; Statistics;
Journal_Title :
Electron Device Letters, IEEE
