Title :
InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency
Author :
Lövblom, Rickard ; Flückiger, Ralf ; Zeng, Yuping ; Ostinelli, Olivier ; Alt, Andreas R. ; Benedickter, Hansruedi ; Bolognesi, C.R.
Author_Institution :
Millimeter-Wave Electron. Group, ETH-Zurich, Zürich, Switzerland
fDate :
5/1/2011 12:00:00 AM
Abstract :
We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies fT = 365 GHz and fMAX = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain β = 35, with a base sheet resistance RSH = 1160 Ω/sq. The present transistors are the first InP/GaAsSb DHBTs to feature fMAX = 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; DHBT; InP-GaAsSb; base sheet resistance; extraction schemes; frequency 500 GHz; maximum oscillation frequency; undepleted collector layer; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Indium phosphide; Oscillators; Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency $(f_{rm MAX})$; millimeter-wave transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2118738
