DocumentCode
1494834
Title
Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation
Author
King, Ya-Chin ; Kuo, Charles ; King, Tsu-Jae ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
48
Issue
6
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
1279
Lastpage
1281
Abstract
A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing
Keywords
CMOS integrated circuits; MOSFET; annealing; dielectric thin films; integrated circuit technology; ion implantation; oxidation; 5 nm; O; high implant energies; implant damage minimization; implanted oxide quality; low-temperature annealing; masked O implantation; multiple-thickness gate oxide; oxide properties; sacrificial oxides; sub-5 nm gate oxide CMOS technologies; Annealing; Boron; Fabrication; Implants; Oxidation; Oxygen; Semiconductor films; Silicon; Substrates; Thermal degradation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.925262
Filename
925262
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